A Kinetic Study of Indium Leaching from Indium-Bearing Zinc Ferrite Under Microwave Heating
Identifieur interne : 000343 ( Chine/Analysis ); précédent : 000342; suivant : 000344A Kinetic Study of Indium Leaching from Indium-Bearing Zinc Ferrite Under Microwave Heating
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Abstract
To obtain information about leaching reaction and kinetics of indium from indium-bearing materials under microwave heating (MH), leaching of indium from indium-bearing zinc ferrite (IBZF) has been investigated. IBZF samples under MH and under conventional heating (CH) were studied by X-ray diffraction and specific surface area. Compared with that of CH, the effect of MH and the effects of various control parameters on indium leaching were studied. The results showed that compared with CH, MH enhanced the indium leaching from IBZF and increased the leaching rate. The leaching behavior of indium from IBZF was analyzed by unreacted shrinking core model, and the regression of kinetic equations showed that leaching of indium from IBZF obeyed the model very well. The activation energies under MH and under CH were 77.374 kJ/mol and 53.555 kJ/mol, respectively; the ratio of frequency factor K0(MH)/ K0(CH) was 10,818.36. The activation mechanism involved in leaching of indium under MH was mainly the increase of reactant energy and effective collision, which caused by the thermal and nonthermal microwave effect. Compared with the activation energy, the effective collision played a more important role in the acceleration of leaching of indium.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A Kinetic Study of Indium Leaching from Indium-Bearing Zinc Ferrite Under Microwave Heating</title><author><name>LINYE ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Chemistry and Chemical Engineering, Guangxi University</s1><s2>Nanning 530004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanning 530004</wicri:noRegion></affiliation></author><author><name>JIAMEI MO</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Chemistry and Chemical Engineering, Guangxi University</s1><s2>Nanning 530004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanning 530004</wicri:noRegion></affiliation></author><author><name>XUANHAI LI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Chemistry and Chemical Engineering, Guangxi University</s1><s2>Nanning 530004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanning 530004</wicri:noRegion></affiliation></author><author><name>LIUPING PAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Chemistry and Chemical Engineering, Guangxi University</s1><s2>Nanning 530004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanning 530004</wicri:noRegion></affiliation></author><author><name>XINYUAN LIANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Chemistry and Chemical Engineering, Guangxi University</s1><s2>Nanning 530004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanning 530004</wicri:noRegion></affiliation></author><author><name>GUANGTAO WEI</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical Engineering, University of Waterloo</s1><s2>Waterloo, ON N2L 3G1</s2><s3>CAN</s3><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Waterloo, ON N2L 3G1</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0031783</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0031783 INIST</idno><idno type="RBID">Pascal:14-0031783</idno><idno type="wicri:Area/Main/Corpus">000228</idno><idno type="wicri:Area/Main/Repository">001225</idno><idno type="wicri:Area/Chine/Extraction">000343</idno></publicationStmt><seriesStmt><idno type="ISSN">1073-5615</idno><title level="j" type="abbreviated">Metall. mater. trans., B, Proc. metall. mater. proc. sci.</title><title level="j" type="main">Metallurgical and materials transactions. B, Process metallurgy and materials processing science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ferrite</term><term>Hydrometallurgy</term><term>Kinetics</term><term>Lixiviation</term><term>Microwave</term><term>Microwave heating</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cinétique</term><term>Hydrométallurgie</term><term>Lixiviation</term><term>Ferrite</term><term>Chauffage hyperfréquence</term><term>Hyperfréquence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">To obtain information about leaching reaction and kinetics of indium from indium-bearing materials under microwave heating (MH), leaching of indium from indium-bearing zinc ferrite (IBZF) has been investigated. IBZF samples under MH and under conventional heating (CH) were studied by X-ray diffraction and specific surface area. Compared with that of CH, the effect of MH and the effects of various control parameters on indium leaching were studied. The results showed that compared with CH, MH enhanced the indium leaching from IBZF and increased the leaching rate. The leaching behavior of indium from IBZF was analyzed by unreacted shrinking core model, and the regression of kinetic equations showed that leaching of indium from IBZF obeyed the model very well. The activation energies under MH and under CH were 77.374 kJ/mol and 53.555 kJ/mol, respectively; the ratio of frequency factor K<sub>0(MH)</sub>/ K<sub>0(CH)</sub> was 10,818.36. The activation mechanism involved in leaching of indium under MH was mainly the increase of reactant energy and effective collision, which caused by the thermal and nonthermal microwave effect. Compared with the activation energy, the effective collision played a more important role in the acceleration of leaching of indium.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1073-5615</s0></fA01><fA03 i2="1"><s0>Metall. mater. trans., B, Proc. metall. mater. proc. sci.</s0></fA03><fA05><s2>44</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A Kinetic Study of Indium Leaching from Indium-Bearing Zinc Ferrite Under Microwave Heating</s1></fA08><fA11 i1="01" i2="1"><s1>LINYE ZHANG</s1></fA11><fA11 i1="02" i2="1"><s1>JIAMEI MO</s1></fA11><fA11 i1="03" i2="1"><s1>XUANHAI LI</s1></fA11><fA11 i1="04" i2="1"><s1>LIUPING PAN</s1></fA11><fA11 i1="05" i2="1"><s1>XINYUAN LIANG</s1></fA11><fA11 i1="06" i2="1"><s1>GUANGTAO WEI</s1></fA11><fA14 i1="01"><s1>School of Chemistry and Chemical Engineering, Guangxi University</s1><s2>Nanning 530004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemical Engineering, University of Waterloo</s1><s2>Waterloo, ON N2L 3G1</s2><s3>CAN</s3><sZ>6 aut.</sZ></fA14><fA20><s1>1329-1336</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>3179B</s2><s5>354000501616040040</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>31 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0031783</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Metallurgical and materials transactions. B, Process metallurgy and materials processing science</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>To obtain information about leaching reaction and kinetics of indium from indium-bearing materials under microwave heating (MH), leaching of indium from indium-bearing zinc ferrite (IBZF) has been investigated. IBZF samples under MH and under conventional heating (CH) were studied by X-ray diffraction and specific surface area. Compared with that of CH, the effect of MH and the effects of various control parameters on indium leaching were studied. The results showed that compared with CH, MH enhanced the indium leaching from IBZF and increased the leaching rate. The leaching behavior of indium from IBZF was analyzed by unreacted shrinking core model, and the regression of kinetic equations showed that leaching of indium from IBZF obeyed the model very well. The activation energies under MH and under CH were 77.374 kJ/mol and 53.555 kJ/mol, respectively; the ratio of frequency factor K<sub>0(MH)</sub>/ K<sub>0(CH)</sub> was 10,818.36. The activation mechanism involved in leaching of indium under MH was mainly the increase of reactant energy and effective collision, which caused by the thermal and nonthermal microwave effect. 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